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Green Product
STM4639
Ver 2.1
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-30V
ID
-14A
R DS(ON) (m Ω) Max
8.5 @ VGS=-10V 13 @ VGS=-4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Procteced
D D D
5 6 7 8
4 3 2 1
G S S S
SO-8 1
D
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
Limit -30 ±20 TA=25°C TA=70°C
d
Units V V A A A
mJ
-14 -11.2 -79 180
-Pulsed Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C TA=70°C
2.5 1.