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Green Product
STM4639T
Ver 1.1
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-30V
ID
-10A
R DS(ON) (m Ω) Max
12.5 @ VGS=-10V 16.5 @ VGS=-4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
TA=25°C TA=70°C
Limit -30 ±24 -10 -8 -56 156
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C TA=70°C
2.5 1.
STM4639T Datasheet
