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SamHop Microelectronics

STM6726 Datasheet Preview

STM6726 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STM6726Green
Product
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
18 @ VGS=10V
60V 8.4A
25 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy d
TC=25°C
PD Maximum Power Dissipation
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
60
±20
8.4
6.7
42
81
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Feb,11,2015
www.samhop.com.tw




SamHop Microelectronics

STM6726 Datasheet Preview

STM6726 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STM6726
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4.2A
VGS=4.5V , ID=3.4A
VDS=5V , ID=4.2A
VDS=25V,VGS=0V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=30V,ID=4.2A,VGS=10V
VDS=30V,ID=4.2A,VGS=4.5V
VDS=30V,ID=4.2A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=3A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Min Typ Max Units
60 V
1 uA
±100 nA
1 2 3V
14 18 m ohm
19 25 m ohm
19 S
1386
109
83
pF
pF
pF
28 ns
23 ns
38 ns
16 ns
16.5 nC
8.2 nC
2.4 nC
4.5 nC
0.76 1.3
V
Feb,11,2015
2 www.samhop.com.tw


Part Number STM6726
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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