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SamHop Microelectronics

STP438A Datasheet Preview

STP438A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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STB/P438AGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
8.5 @ VGS=10V
40V 60A
11 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
40
±20
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
60
48
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
177
196
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
62.5
40
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
2
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Aug,02,2010
1 www.samhop.com.tw




SamHop Microelectronics

STP438A Datasheet Preview

STP438A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STB/P438A
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
40
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
tr
tD(OFF)
tf
Turn-On DelayTime
Rise Time
Turn-Off DelayTime
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=30A
VGS=4.5V , ID=26A
VDS=10V , ID=30A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=20V,ID=25A,VGS=10V
VDS=20V,ID=25A,VGS=4.5V
VDS=20V,ID=25A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,VDD=20V,L=0.5mH.(See Figure13)
Typ
1.8
6.8
8.1
69
1540
248
180
28
31
62
36
26.5
12.5
2.8
7.8
0.77
Max Units
1
±100
V
A
nA
3V
8.5 m ohm
11 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.3 V
Aug,02,2010
2 www.samhop.com.tw


Part Number STP438A
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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