Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID
80A
R DS(ON) (m Ω) Max
4.8 @ VGS=10V
D
D
G
S
G D S
G
STP SERIES TO-220
STB SERIES TO-263(DD-PAK)
S.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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STB/P8444
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
40V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package.
ID
80A
R DS(ON) (m Ω) Max
4.