900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SamHop Microelectronics

STS2301 Datasheet Preview

STS2301 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S amHop Microelectronics C orp.
S TS 2301
J UL.30 2004 ver1.1
P-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
-20V
-3.4A
60 @ VGS = -4.5V
80 @ VGS = -2.5V
105 @ VGS = -1.8V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-20
12
-3.4
-12
-1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R thJA
100
C /W
1




SamHop Microelectronics

STS2301 Datasheet Preview

STS2301 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S TS 2301
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
R DS(ON)
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
tD(ON)
tr
tD(O F F )
tf
Qg
Gate-S ource Charge
Gate-Drain Charge
Qgs
Qgd
C ondition
VGS =0V, ID =-250uA
VDS =-16V, VGS= 0V
VGS = 10V, VDS= 0V
VDS =VGS, ID =-250uA
VGS =-4.5V, ID = -4.0A
VGS = -2.5V, ID= -2.0A
VGS =-1.8V, ID = -1.0A
VDS = -5V, VGS = -4.5V
VDS = -5V, ID = -5A
VDS = -15V, VGS = 0V
f =1.0MHZ
VDD = -10V,
ID = -1A,
VGS = -4.5V,
R L = 10 ohm
R GEN = 6 ohm
VDS = -10V, ID = -3A,
VGS = -4.5V
Min Typ C Max Unit
-20 V
1 uA
100 nA
-0.6 -0.85 -1.5 V
50 60 m-ohm
70 80 m-ohm
95 105 m-ohm
-20 A
5S
926 PF
183 PF
141 PF
13.9 ns
17.6 ns
87.7 ns
53.9 ns
11.9 nC
1.96 nC
3.49 nC
2


Part Number STS2301
Description P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
PDF Download

STS2301 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STS2300 N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
2 STS2300S N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
3 STS2301 P-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
4 STS2301A P-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
5 STS2302A N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
6 STS2302S N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
7 STS2305 P-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
8 STS2305A P-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
9 STS2306 N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy