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Green Product
S T S 2306A
Apr. 27 2010 V er1.1
S amHop Microelectronics C orp.
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m Ω ) Max
ID
4.5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
40 @ V G S = 4.5V 50 @ V G S = 2.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D
SO T-2 3 -3 L
D S G
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 10 4.5 17 1.25 1.
STS2306A Datasheet
