STS2309 Description
S amHop Microelectronics C orp. S T S 2309 Nov 22, 2004 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2.3A R DS (ON) S uper high dense cell design for low R DS (ON ). 130 @ V G S = -4.5V 190@ V G S = -2.5V R ugged and reliable.