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SamHop Microelectronics

STS2622A Datasheet Preview

STS2622A Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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STS2622AGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 2.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Max
60 @ VGS=4.5V
20V 3.4A
90 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
SOT 26
Top View
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
D1
G1 G2
S1
D2
S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
20
±12
3.4
2.7
13.5
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,22,2010
www.samhop.com.tw




SamHop Microelectronics

STS2622A Datasheet Preview

STS2622A Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STS2622A
Ver 2.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= ±12V , VDS=0V
20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=4.5V , ID=3.4A
VGS=2.5V , ID=2.8A
VDS=5V , ID=3.4A
VDS=10V,VGS=0V
f=1.0MHz
VDD=10V
ID=1A
VGS=4.5V
RGEN=6 ohm
VDS=10V,ID=3.4A,
VGS=4.5V
0.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Typ
0.78
48
67
9.5
230
55
35
7
7.2
13.5
1.6
4.5
0.9
1.9
0.8
Max Units
1
±100
V
uA
nA
1.5 V
60 m ohm
90 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
Jul,22,2010
2 www.samhop.com.tw


Part Number STS2622A
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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