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SamHop Microelectronics

STS3405 Datasheet Preview

STS3405 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS3405
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
100 @ VGS=-10V
-3A
150 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
-30
±20
-3
-2.4
-12
1.25
0.8
-55 to 150
Units
V
V
A
A
A
W
W
°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
100 °C/W
Details are subject to change without notice.
1
Nov,21,2008
www.samhop.com.tw




SamHop Microelectronics

STS3405 Datasheet Preview

STS3405 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STS3405
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
-30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
tf
Turn-Off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-3A
VGS=-4.5V , ID=-2.4A
VDS=-5V , ID=-3A
VDS=-15V,VGS=0V
f=1.0MHz
VDD=-15V
ID=-1A
VGS=-10V
RGEN=6 ohm
VDS=-15V,ID=-3A,
VGS=-10V
-1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS=-1.25A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Typ Max Units
1
±100
V
uA
nA
-1.5 -3
V
80 100 m ohm
115 150 m ohm
8S
435 pF
90 pF
60 pF
8 ns
6.8 ns
37 ns
13 ns
7.8 nC
0.58 nC
2.2 nC
-1.25
-0.8 -1.25
A
V
Nov,21,2008
2 www.samhop.com.tw


Part Number STS3405
Description P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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