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Green Product
STS3414
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
50 @ VGS=10V 30V 4A 60 @ VGS=4.5V 75 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-23 package.
D
S OT-23
D S G
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a a
Limit 30 ±12 TA=25°C TA=25°C 4 15 1.25 -55 to 150
Units V V A A W °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
100
°C/W
Details are subject to change without notice.
STS3414 Datasheet
