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SamHop Microelectronics

STS3414 Datasheet Preview

STS3414 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STS3414
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Max
50 @ VGS=10V
30V 4A 60 @ VGS=4.5V
75 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TA=25°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
30
±12
4
15
1.25
-55 to 150
100
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Jan,16,2009
www.samhop.com.tw




SamHop Microelectronics

STS3414 Datasheet Preview

STS3414 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STS3414
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±12V , VDS=0V
30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4A
VGS=4.5V , ID=3A
VGS=2.5V , ID=1A
VDS=5.0V , ID=4A
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=15V,ID=4A,VGS=10V
VDS=15V,ID=4A,VGS=4.5V
VDS=15V,ID=4A,
VGS=10V
0.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS=1.25A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Typ Max Units
1
±100
V
uA
nA
0.9 1.2
V
37 50 m ohm
45 60 m ohm
50 75 m ohm
13 S
440 pF
62 pF
37 pF
4 ns
8 ns
43 ns
5 ns
9.3 nC
4.6 nC
1 nC
1.4 nC
1.25
0.82 1.2
A
V
Jan,16,2009
2 www.samhop.com.tw


Part Number STS3414
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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