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SamHop Microelectronics

STS3415 Datasheet Preview

STS3415 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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Gr
Pr
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS3415
Ver 2.0
PRODUCT SUMMARY
VDSS
-20V
ID
-4.2A
RDS(ON) (mΩ) Max
46 @ VGS=-4.5V
47 @ VGS=-4.0V
49 @ VGS=-3.7V
54 @ VGS=-3.1V
61 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-20
±10
-4.2
-3.4
-16
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
May,22,2012
www.samhop.com.tw




SamHop Microelectronics

STS3415 Datasheet Preview

STS3415 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STS3415
Ver 2.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-16V , VGS=0V
VGS= ±10V , VDS=0V
-20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-1mA
VGS=-4.5V , ID=-2.1A
VGS=-4.0V , ID=-2.1A
VGS=-3.7V , ID=-2.1A
VGS=-3.1V , ID=-2.1A
VGS=-2.5V , ID=-2.1A
VDS=-5V , ID=-2.1A
VDS=-10V,VGS=0V
f=1.0MHz
VDD=-16V
ID=-2.1A
VGS=-4.5V
RGEN= 6 ohm
VDS=-16V,ID=-4.2A,
VGS=-4.5V
-0.5
28
29
30
32
35
Typ
-0.7
35
36
37
40
45
11
613
159
141
85
225
1310
605
11.8
0.85
4.7
Max Units
V
1 uA
±10 uA
-1.5 V
46 m ohm
47 m ohm
49 m ohm
54 m ohm
61 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=-1.1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
-0.8 -1.2 V
May,22,2012
2 www.samhop.com.tw


Part Number STS3415
Description P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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