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SamHop Microelectronics

STS3417 Datasheet Preview

STS3417 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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Gr
Pr
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS3417
Ver 1.0
PRODUCT SUMMARY
VDSS
-30V
ID RDS(ON) (mΩ) Max
96 @ VGS=-4.5V
100 @ VGS=-4.0V
-3A 103 @ VGS=-3.7V
111 @ VGS=-3.1V
123 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
PD
Maximum Power Dissipation a
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±12
-3
-11
1.25
-55 to 150
100
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Aug,29,2012
www.samhop.com.tw




SamHop Microelectronics

STS3417 Datasheet Preview

STS3417 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STS3417
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
BVDSX
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-10mA
VGS=20V , ID=-10mA
VDS=-30V , VGS=0V
VGS= ±12V , VDS=0V
-30
-10
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
VDS=VGS , ID=-0.25mA
VGS=-4.5V , ID=-1.5A
VGS=-4.0V , ID=-1.5A
VGS=-3.7V , ID=-1.5A
VGS=-3.1V , ID=-1.5A
VGS=-2.5V , ID=-1.5A
-0.5
52
54
56
61
69
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-15V,VGS=0V
f=1.0MHz
VDD=-15V
ID=-1.5A
VGS=-4.5V
RGEN= 4.7 ohm
VDS=-15V,ID=-1.5A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=-1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Typ
-0.7
74
76
78
83
91
323
73
53
7.2
12.4
7.4
8.9
9
1.3
2.7
-0.8
Max Units
V
V
10 uA
±10 uA
-1.5 V
96 m ohm
100 m ohm
103 m ohm
111 m ohm
123 m ohm
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-1.2 V
Aug,29,2012
2 www.samhop.com.tw


Part Number STS3417
Description P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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