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SamHop Microelectronics

STS3419 Datasheet Preview

STS3419 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS3419
Ver 2.2
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-3.8A
65 @ VGS=-10V
90 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
Halogen free.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a c
TA=25°C
TA=70°C
IDM -Pulsed c
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±20
-3.8
-3.0
-14
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
May,16,2014
www.samhop.com.tw




SamHop Microelectronics

STS3419 Datasheet Preview

STS3419 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STS3419
Ver 2.2
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
-30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
tr
tD(OFF)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-1.7A
VGS=-4.5V , ID=-1.4A
VDS=-5V , ID=-1.7A
VDS=-15V,VGS=0V
f=1.0MHz
-1.0
VDD=-15V
ID=-1A
VGS=-10V
RGEN= 6 ohm
VDS=-15V,ID=-1.7A,VGS=-10V
VDS=-15V,ID=-1.7A,VGS=-4.5V
VDS=-15V,ID=-1.7A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS=-1A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
Typ Max Units
-1
±100
V
uA
nA
-1.6 -2.5 V
50 65 m ohm
75 90 m ohm
5.6 S
500 pF
95 pF
74 pF
11
13
18
36
10
5
0.83
2.85
ns
ns
ns
ns
nC
nC
nC
nC
-0.8 -1.2 V
May,16,2014
2 www.samhop.com.tw


Part Number STS3419
Description P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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