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SamHop Microelectronics

STS6308 Datasheet Preview

STS6308 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STS6308
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Max
83 @ VGS= 10V
60V 3A
107 @ VGS= 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S OT23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a TC=25°C
TC=70°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
60
±20
3
2.4
11.4
23
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,15,2010
www.samhop.com.tw




SamHop Microelectronics

STS6308 Datasheet Preview

STS6308 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STS6308
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
60 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3A
VGS=4.5V , ID=2.6A
VDS=5V , ID=3A
VDS=25V,VGS=0V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=30V,ID=3A,VGS=10V
VDS=30V,ID=3A,VGS=4.5V
VDS=30V,ID=3A,
VGS=10V
1 1.8 3 V
66 83 m ohm
79 107 m ohm
7.5 S
950 pF
52 pF
40 pF
15.7
12
21
18.5
15
7
1.8
3.5
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS= 1A
0.795 1.2
V
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
Jul,15,2010
2 www.samhop.com.tw


Part Number STS6308
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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