STS6601 transistor equivalent, p-channel enhancement mode field effect transistor.
Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package.
ID
-3.2A
R DS(ON) (m Ω) Max
110 @ VGS=-10V 160 @ VGS=-4.5V
S OT26 Top View
D
D D .
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