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STS8216 - Dual N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 6A R DS(ON) (m Ω) Max 20 @ VGS=4.0V 27 @ VGS=2.5V SOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2.

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Datasheet Details

Part number STS8216
Manufacturer SamHop Microelectronics
File Size 180.05 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet STS8216 Datasheet

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Full PDF Text Transcription (Reference)

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Green Product STS8216 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 6A R DS(ON) (m Ω) Max 20 @ VGS=4.0V 27 @ VGS=2.5V SOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 6 4.8 24 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.