* Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ESD Protected. D G S G STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain
STT01L07 Datasheet (130.48 KB)
STT01L07
SamHop Microelectronics
130.48 KB
N-channel mosfet.
Green Product STT01L07 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DS.
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