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SamHop Microelectronics

STT01L10 Datasheet Preview

STT01L10 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STT01L10Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
1.5A
310 @ VGS=10V
350 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
100
±20
1.5
1.2
10
3
1.9
-55 to 150
42
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Aug,28,2013
www.samhop.com.tw




SamHop Microelectronics

STT01L10 Datasheet Preview

STT01L10 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STT01L10
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=0.75A
VGS=4.5V , ID=0.7A
VDS=10V , ID=0.75A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=0.75A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=0.75A,VGS=10V
VDS=50V,ID=0.75A,VGS=4.5V
VDS=50V,ID=0.75A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=0.9A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
Typ
1.7
230
260
5.5
480
28
20
9.3
8.2
19.2
9.2
8
4.2
1
1.8
0.8
Max Units
1
±100
V
uA
nA
3V
310 m ohm
350 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.2 V
Aug,28,2013
2 www.samhop.com.tw


Part Number STT01L10
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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