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SamHop Microelectronics

STT03N20 Datasheet Preview

STT03N20 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STT03N20Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
200V
0.7A
2.43 @ VGS=10V
2.66 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a c
TA=25°C
TA=70°C
IDM -Pulsed c
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
200
±20
0.7
0.56
4.7
3
1.9
-55 to 150
42
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Apr,18,2014
www.samhop.com.tw




SamHop Microelectronics

STT03N20 Datasheet Preview

STT03N20 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STT03N20
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=160V , VGS=0V
VGS= ±20V , VDS=0V
200
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=0.35A
VGS=4.5V , ID=0.33A
VDS=10V , ID=0.35A
VDS=25V,VGS=0V
f=1.0MHz
VDD=100V
ID=0.35A
VGS=10V
RGEN= 6 ohm
VDS=100V,ID=0.35A,VGS=10V
VDS=100V,ID=0.35A,VGS=4.5V
VDS=100V,ID=0.35A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=0.8A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
Typ
1.7
1.94
1.97
1.3
265
20
12
11
9
24
6
6.4
3.6
1
1.7
0.82
Max Units
1
±100
V
uA
nA
3
2.43
2.66
V
ohm
ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.2 V
Apr,18,2014
2 www.samhop.com.tw


Part Number STT03N20
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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