* Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 2.5A R DS(ON) (m ) Max 225 @ VGS=10V 360 @ VGS=4.5V D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-
STT08L01 Datasheet (114.62 KB)
STT08L01
SamHop Microelectronics
114.62 KB
N-channel mosfet.
Gre r Pro STT08L01 Ver 1.2 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 10.
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