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SamHop Microelectronics

STT432S Datasheet Preview

STT432S Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STT432SGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Max
11.5 @ VGS=10V
40V 11A
15 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
40
±20
11
8.8
44
110
3
1.9
-55 to 150
42
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Aug,04,2009
www.samhop.com.tw




SamHop Microelectronics

STT432S Datasheet Preview

STT432S Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STT432S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
40 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=11A
VGS=4.5V , ID=10A
VDS=5V , ID=11A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=20V,ID=11A,VGS=10V
VDS=20V,ID=11A,VGS=4.5V
VDS=20V,ID=11A,
VGS=10V
1 1.5 3
V
9 11.5 m ohm
11 15 m ohm
40 S
1160
218
140
pF
pF
pF
18.2
26
65
16
22
11.2
2.5
5.4
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS=2.5A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
2.5
0.76 1.2
A
V
Aug,04,2009
2 www.samhop.com.tw


Part Number STT432S
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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