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STT6603
S a mHop Microelectronics C orp.
Ver 1.0
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-60V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-223 package.
ID
-2.5A
R DS(ON) (m Ω) Max
180 @ VGS=-10V 240 @ VGS=-4.5V
D
G S
G
SO T - 223
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit -60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -2.5 -2.0 -20
a
Units V V A A A W W °C
2.08 1.
STT6603 Datasheet
