* Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -
STT812A
SamHop Microelectronics
124.51 KB
N-channel mosfet.
Green Product STT812A Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS.
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