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SamHop Microelectronics

STU2240NL Datasheet Preview

STU2240NL Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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S amHop Microelectronics C orp.
S T U/D2240NL
Nov 22,2004
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
www.DataShee4t40UV.com 10A
35@ VGS = 10V
60@ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
S ymbol
Drain-S ource Voltage
VDS
Gate-S ource Voltage
VGS
Drain C urrent-C ontinuous a @ Ta
-P ulsed b
25 C
70 C
ID
IDM
Limit
40
20
10
8.3
40
Unit
V
V
A
A
A
Drain-S ource Diode Forward C urrent a
IS
15
A
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
Ta= 25 C
Ta=70 C
PD
TJ, TSTG
50
35
-55 to 175
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3 C/W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W




SamHop Microelectronics

STU2240NL Datasheet Preview

STU2240NL Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S T U/D2240NL
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
www.DataSheet4U.com
Gate-Body Leakage
ON CHARACTERISTICS b
BVDSS VGS =0V, ID =250uA
IDSS VDS =32V, VGS =0V
IGSS VGS = 20V, VDS= 0V
40
V
1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1.0 1.8 3.0 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =10A
VGS =4.5V, ID= 8A
25 35 m ohm
45 60 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 5V, VGS = 10V
VDS = 10V, ID =10A
20
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
COSS
VDS =25V, VGS = 0V
f =1.0MHZ
CRSS
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 20V
tr ID = 1 A
tD(O F F )
VGS = 4.5V
R GEN = 3.3 ohm
tf
12
840 950
85 98
70 82
2.5
15.2 18
4.8 5.6
18.6 22
12.1 14
A
S
PF
PF
PF
ohm
ns
ns
ns
ns
Total Gate Charge
Qg VDS =20V, ID =10A,VGS =10V
18.7 22 nC
Gate-S ource Charge
Gate-Drain Charge
VDS =20V, ID =10A,VGS =4.5V
Qgs VDS =20V, ID = 10A
Qgd VGS =10V
2
8.9 10 nC
3.9 4.6 nC
3.1 3.6 nC


Part Number STU2240NL
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
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