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SamHop Microelectronics

STU9916L Datasheet Preview

STU9916L Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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STU/D9916L
SamHop Microelectronics Corp.
Preliminary Mar.25 2004
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m ) Max
www.DataShee3t40UV.com 25A
30@ VGS = 10V
40@ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
D
G
S
SDU SERIES
TO-252AA(D-PAK)
GDS
SDD SERIES
TO-251(l-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @TA= 25 C
-Pulsed b
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
R JC
R JA
Limit
30
20
25
63
20
50
-55 to 175
3
50
Unit
V
V
A
A
A
W
C
C/W
C/W
1




SamHop Microelectronics

STU9916L Datasheet Preview

STU9916L Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S T U/D9916L
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
www.DataSZheeroetG4Ua.tceoVmoltage Drain C urrent
Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS = 0V, ID = 250uA 30
IDSS VDS = 24V, VGS = 0V
IGSS VGS = 20V, VDS = 0V
V
1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250uA 0.7 1.0 1.5 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS = 10V, ID =20A
VGS = 4.5V, ID = 20A
25 30 m ohm
35 40 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall time
tf
VDS = 10V, VGS = 10V
VDS = 10V, ID = 20A
20
10
A
S
VDs =25V, VGS = 0V
f = 1.0MHZ
813 821 PF
127 130 PF
98 104 PF
VDD = 15V,
ID =1A,
VGS = 10V,
R L = 15 ohm
R GS = 11 ohm
22.1 29
11.4 12
28.9 31
18.7 22
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg VDD = 15V,ID = 20A,VGS =10V
VDS = 15V,ID = 20A,VGS =4.5V
Qgs VDD = 15V, ID = 20A,
Qgd R L=0.75 ohm
18.7 20
9.3 10
3.9 4
3.2 4
nC
nC
nC
nC
2


Part Number STU9916L
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
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