IRFIZ24A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
TJ , TSTG
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25o C ) Continuous Drain Current (TC=100o C )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche Current
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25o C )- Total Power Dissipation (TC=25o C ) Linear Derating Factor
O2 O1 O1 O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 60 V RDS(on) = 0.07 Ω ID = 17 A
D2-PAK I2-PAK
1 3
1 2 3
1. Gate 2. Drain 3. Source
Value 60 17 12 68 +_ 20 149 17 4.4 5.5 3.8 44 0.29
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