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  Samsung Electronic Components Datasheet  

IRFIZ24A Datasheet

Power MOSFET

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Advanced Power MOSFET
IRFW/IZ24A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175¡ ÉOperating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
Lower RDS(ON) : 0.050 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC )*
Total Power Dissipation (TC=25oC )
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 60 V
RDS(on) = 0.07
ID = 17 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
60
17
12
68
+_ 20
149
17
4.4
5.5
3.8
44
0.29
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
R θ JC
R θ JA
R θ JA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.43
40
62.5
Units
oC /W


  Samsung Electronic Components Datasheet  

IRFIZ24A Datasheet

Power MOSFET

No Preview Available !

IRFW/IZ24A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
60 -- -- V VGS=0V,ID=250µ A
-- 0.064 -- V/ oC ID=250µA See Fig 7
2.0 -- 4.0 V VDS=5V,ID=250 µA
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=60V
-- -- 100 µA VDS=48V,TC=150 oC
Static Drain-Source
On-State Resistance
-- -- 0.07 VGS=10V,ID=8.5A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 10.8 --
VDS=30V,ID=8.5A
O4
-- 600 780
-- 210 240 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 83 95
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 13 30
-- 19 40
VDD=30V,ID=17A,
-- 46 100 ns RG=18
-- 48 100
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller “) Charge
-- 24 32
-- 4.3 --
-- 10.8 --
VDS=48V,VGS=10V,
nC ID=17A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 17
-- 68
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.5 V TJ=25oC,IS=17A,VGS=0V
-- 60 -- ns TJ=25oC,IF=17A
-- 0.12 -- µC diF/dt=100A/µ s
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=0.6mH, IAS=17A, VDD=25V, RG=27, Starting TJ =25 oC
O3 ISD <_17A, di/dt <_250A/ µs, VDD <_BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature


Part Number IRFIZ24A
Description Power MOSFET
Maker Samsung
Total Page 6 Pages
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