Datasheet4U Logo Datasheet4U.com

IRFIZ24A - Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Puls.

📥 Download Datasheet

Datasheet preview – IRFIZ24A

📁 Similar Datasheet

  • IRFIZ24E - Power MOSFET (International Rectifier)
  • IRFIZ24EPBF - HEXFET Power MOSFET (International Rectifier)
  • IRFIZ24G - HEXFET Power MOSFET (International Rectifier)
  • IRFIZ24G - N-Channel MOSFET (INCHANGE)
  • IRFIZ24G - Power MOSFET (Vishay)
  • IRFIZ24GP - N-Channel 60V MOSFET (VBsemi)
  • IRFIZ24GPbF - Power MOSFET (Vishay)
  • IRFIZ24N - Power MOSFET (International Rectifier)
  • IRFIZ24N - N-Channel MOSFET (INCHANGE)
  • IRFIZ24NPBF - Power MOSFET (International Rectifier)
Other Datasheets by Samsung

Full PDF Text Transcription

Click to expand full text
Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.
Published: |