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IRFWZ24A - Power MOSFET

This page provides the datasheet information for the IRFWZ24A, a member of the IRFIZ24A Power MOSFET family.

Datasheet Summary

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Puls.

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Datasheet preview – IRFWZ24A

Datasheet Details

Part number IRFWZ24A
Manufacturer Samsung
File Size 208.25 KB
Description Power MOSFET
Datasheet download datasheet IRFWZ24A Datasheet
Additional preview pages of the IRFWZ24A datasheet.

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Full PDF Text Transcription

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Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.
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