IRFWZ24A Datasheet Power MOSFET

Manufacturer: Samsung Semiconductor

Download the IRFWZ24A datasheet PDF. This datasheet also includes the IRFIZ24A variant, as both parts are published together in a single manufacturer document.

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IRFWZ24A power mosfet by Samsung Semiconductor - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRFIZ24A-Samsung.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRFWZ24A
Manufacturer	Samsung Semiconductor
File Size	208.25 KB
Description	Power MOSFET
Download	IRFWZ24A Download (PDF)

Overview

Advanced Power MOSFET IRFW/IZ24A.

Key Features

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Puls.

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