K4B1G0846G-BCH9 Datasheet | Samsung Semiconductor

Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (Ro HS pliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2011 Samsung Electronics Co., Ltd. All rights reserved. -1- K4B1G0446G K4B1G0846G datasheet History - First release. - Corrected Typo. - Corrected Typo. - Corrected Typo. - Changed timing parameters (Setup/Hold time) Draft Date Nov. 2010 Nov. 2010 Jan. 2011 Jul. 2011 Aug. 2011 Rev. 1.1 DDR3 SDRAM Revision History Revision No. 1.0 1.01 1.02 1.03 1.1 Remark Editor S.H.Kim S.H.Kim J.Y.Lee J.Y.Lee J.Y.Lee -2- K4B1G0446G K4B1G0846G datasheet Rev. 1.1 DDR3 SDRAM Table Of Contents 1Gb G-die DDR3 SDRAM 1. Ordering Information ..................................................................................................................................................... 5 2. Key Features .......................................................