* VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
* VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
* Double-data-rate architecture; two data transfers per clock cycle
* Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
* Four banks operation
K4H510438C-UC Datasheet (208.79 KB)
K4H510438C-UC
Samsung
208.79 KB
512mb c-die ddr sdram.
DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 512Mb C-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.0 January. 20.
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