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K4H510838C-UC - 512Mb C-die DDR SDRAM

Download the K4H510838C-UC datasheet PDF. This datasheet also covers the K4H510438C-UC variant, as both devices belong to the same 512mb c-die ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

32Mb x 16 64Mb x 8 128Mb x 4 DDR SDRAM VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD V

Features

  • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333.
  • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400.
  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • DLL aligns DQ and DQS transition with CK transition.
  • MRS cycle with address key programs -. Read latency : DDR266(2, 2.5 Clock), DDR333(.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4H510438C-UC-Samsung.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4H510838D (K4H51xx38D) 512Mb D-die DDR SDRAM Specification Samsung semiconductor
K4H510838D-LA2 512Mb D-die DDR SDRAM Specification 66 TSOP-II Samsung semiconductor
K4H510838D-LB0 512Mb D-die DDR SDRAM Specification 66 TSOP-II Samsung semiconductor
K4H510838D-LB3 512Mb D-die DDR SDRAM Specification 66 TSOP-II Samsung semiconductor
K4H510838D-LCC 512Mb D-die DDR SDRAM Specification 66 TSOP-II Samsung semiconductor

Other Datasheets by Samsung Semiconductor

Part Number Description
K4H510838C-TCA0 128Mb DDR SDRAM
K4H510838C-TCA2 128Mb DDR SDRAM
K4H510838C-TCB0 128Mb DDR SDRAM
K4H510838C-TLA0 128Mb DDR SDRAM
K4H510838C-TLA2 128Mb DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 512Mb C-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.0 January. 2005 Rev. 1.0 January. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) 512Mb C-die Revision History Revision 0.0 (April, 2004) - First version for internal review Revision 0.1 (August, 2004) - Preliminary spec release. Revision 0.2 (October, 2004) - Changed IDD current. Revision 1.0 (January, 2005) - Release the Rev. 1.0 spec. DDR SDRAM Rev. 1.0 January. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.
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