K4J52324QE - 512Mbit GDDR3 SDRAM

Name: K4J52324QE
SKU: K4J52324QE-785632

Samsung

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Datasheet Details

Part number	K4J52324QE
Manufacturer	Samsung
File Size	1.40 MB
Description	512Mbit GDDR3 SDRAM
Datasheet	K4J52324QE-Samsung.pdf

K4J52324QE Product details

Description

FOR 2M x 32Bit x 8 Bank GDDR3 SDRAM The K4J52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.9V + 0.1V power supply for device operation for -BJ.
1.9V + 0.1V power supply for I/O interface for -BJ.
1.8V + 0.1V power supply for device operation for -BC.
1.8V + 0.1V power supply for I/O interface for -BC.
On-Die Termination (ODT).
Output Driver Strength adjustment by EMRS.
Calibrated output drive.
1.8V Pseudo Open drain compatible inputs/outputs.
8 internal banks for.

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Published: Mar 11, 2014 |