Datasheet Details
| Part number | K4J52324QE |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 1.40 MB |
| Description | 512Mbit GDDR3 SDRAM |
| Datasheet |
 K4J52324QE Datasheet
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General Description
FOR 2M x 32Bit x 8 Bank GDDR3 SDRAM The K4J52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Key Features
- 1.9V + 0.1V power supply for device operation for -BJ.
- 1.9V + 0.1V power supply for I/O interface for -BJ.
- 1.8V + 0.1V power supply for device operation for -BC.
- 1.8V + 0.1V power supply for I/O interface for -BC.
- On-Die Termination (ODT).
- Output Driver Strength adjustment by EMRS.
- Calibrated output drive.
- 1.8V Pseudo Open drain compatible inputs/outputs.
- 8 internal banks for.