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K4N51163QZ 512Mbit gDDR2 SDRAM

K4N51163QZ Description

K4N51163QZ 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM 84FBGA with Halogen-Free & Lead-Free (RoHS compliant) Revision 1.3 September 2008 INFORMATION IN TH.
FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device.

K4N51163QZ Features

* 1.8V + 0.1V power supply for device operation
* 1.8V + 0.1V power supply for I/O interface
* 4 Banks operation
* Posted CAS
* Programmable CAS Letency : 5, 6, 7
* Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6
* Write Latency (WL) = Read

K4N51163QZ Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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Datasheet Details

Part number
K4N51163QZ
Manufacturer
Samsung
File Size
1.37 MB
Datasheet
K4N51163QZ-Samsung.pdf
Description
512Mbit gDDR2 SDRAM

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512Mbit gDDR2 SDRAM Samsung
Samsung K4N51163QZ-like datasheet