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K4N51163QZ Datasheet - Samsung

K4N51163QZ, 512Mbit gDDR2 SDRAM

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 500MHz for general applications. The chip is designed to comply with the following key gDDR.
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Datasheet Details

Part number:

K4N51163QZ

Manufacturer:

Samsung

File Size:

1.37 MB

Description:

512Mbit gDDR2 SDRAM

K4N51163QZ Features

* 1.8V + 0.1V power supply for device operation

* 1.8V + 0.1V power supply for I/O interface

* 4 Banks operation

* Posted CAS

* Programmable CAS Letency : 5, 6, 7

* Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6

* Write Latency (WL) = Read

K4N51163QZ Distributors

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K4N51163QZ 512Mbit gDDR2 SDRAM Samsung
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K4N51163QZ Stock/Price

Distributor
Samsung Electro-Mechanics
K4N51163QZ-HC25
Quest Components
1190 In Stock
Qty : 405 units
Unit Price : $4.5