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K4N56163QF-GC Datasheet 256Mbit gDDR2 SDRAM

Manufacturer: Samsung Semiconductor

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Overview

K4N56163QF-GC 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Key Features

  • 1.8V + 0.1V power supply for device operation.
  • 1.8V + 0.1V power supply for I/O interface.
  • 4 Banks operation.
  • Posted CAS.
  • Programmable CAS Letency : 4,5,6 and 7.
  • Programmable Additive Latency : 0, 1, 2, 3. 4 and 5.
  • Write Latency (WL) = Read Latency (RL) -1.
  • Burst Legth : 4 and 8 (Interleave/nibble sequential).
  • Programmable Sequential/ Interleave Burst Mode.
  • Bi-directional Differential Data-Strobe (Single-.

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