K4N56163QG Datasheet 256Mbit gDDR2 SDRAM

Manufacturer: Samsung Semiconductor

K4N56163QG 256mbit gddr2 sdram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K4N56163QG
Manufacturer	Samsung Semiconductor
File Size	961.34 KB
Description	256Mbit gDDR2 SDRAM
Download	K4N56163QG Download (PDF)

Overview

K4N56163QG 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 1.4 December 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.

ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

Key Features

1.8V + 0.1V power supply for device operation for -ZC25/2A.
1.8V + 0.1V power supply for I/O interface for -ZC25/2A.
2.0V + 0.1V power supply for device operation for -ZC20/22.
2.0V + 0.1V power supply for I/O interface for -ZC20/22.
4 Banks operation.
Posted CAS.
Programmable CAS Letency : 4,5,6.
Programmable Additive Latency : 0, 1, 2, 3. 4 and 5.
Write Latency (WL) = Read Latency (RL) -1.
Burst Legth :.

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