Datasheet4U Logo Datasheet4U.com

K4S643232H-TC-L60 Datasheet 64Mb H-die (x32) SDRAM

Manufacturer: Samsung Semiconductor

Overview: SDRAM 64Mb H-die (x32) CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.3 February 2004 *Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.3 February. 2004 SDRAM 64Mb H-die (x32) Revision History Revision 0.0 (June, 2003) - Target spec First release. Revision 0.1 (July, 2003) - Delete speed 4.5ns. Revision 0.2 (September, 2003) - Preliminary spec release. Revision 1.0 (November, 2003) - Final spec release Revision 1.1 (December, 2003) - Corrected typo Revision 1.2 (December, 2003) - Modified load cap 50pF -> 30pF & Typo Revision 1.3 (February, 2004) - Corrected typo. CMOS SDRAM - 2 - Rev. 1.3 February.

Download the K4S643232H-TC-L60 datasheet PDF. This datasheet also includes the K4S643232H-TC-L70 variant, as both parts are published together in a single manufacturer document.

General Description

The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock.

I/O transactions are possible on every clock cycle.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period(4K Cycle).