Datasheet4U Logo Datasheet4U.com
Samsung Semiconductor logo

K4T56083QF Datasheet

Manufacturer: Samsung Semiconductor
K4T56083QF datasheet preview

Datasheet Details

Part number K4T56083QF
Datasheet K4T56083QF_Samsung.pdf
File Size 477.73 KB
Manufacturer Samsung Semiconductor
Description 256Mb F-die DDR2 SDRAM
K4T56083QF page 2 K4T56083QF page 3

K4T56083QF Overview

AC & DC Operating Conditions & Specifications Page 2 of 27 Rev. 2005 256Mb F-die DDR2 SDRAM 0. Speed bin is in order of CL-tRCD-tRP.

K4T56083QF Key Features

  • JEDEC standard 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 4 Banks
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
K4T56043QF 256Mb F-die DDR2 SDRAM
K4T56163QN 256Mb N-die DDR2 SDRAM
K4T51043Q 512Mb B-die DDR2 SDRAM
K4T51043QG 512Mb G-die DDR2 SDRAM
K4T51043QI 512Mb I-die DDR2 SDRAM
K4T51043QJ 512Mb J-die DDR2 SDRAM
K4T51083QC 512Mb C-die DDR2 SDRAM
K4T51083QG 512Mb G-die DDR2 SDRAM
K4T51083QI 512Mb I-die DDR2 SDRAM
K4T51083QJ 512Mb J-die DDR2 SDRAM

K4T56083QF Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts