K5N1229ACD-BQ12 Datasheet | Samsung Semiconductor

Features <mon> - Operating Temperature : -25°C ~ 85°C - Package : 56Ball FBGA Type - 8mm x 9.2mm x 1.2mmt 0.5mm ball pitch - This device has the Sync MRS option only (Extended Configuration Register) - Single Voltage, 1.7V to 1.95V for Read and Write operations - Organization - 33,554,432 x 16 bit ( Word Mode Only) - Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15 - Read While Program/Erase Operation - Multiple Bank Architecture - 16 Banks (32Mb Partition) - OTP Block : Extra 512-Word block - Read Access Time (@ CL=30p F) - Asynchronous Random Access Time : 100ns - Synchronous Random Access Time :95ns - Burst Access Time :7ns (108MHz) - Burst Length : - Continuous Linear Burst - Linear Burst : 8-word & 16-word with Wrap - Block Architecture - Uniform block part : Five hundred twelve 64Kword blocks - Boot block part : Four 16Kword blocks and five hundred eleven 64Kword blocks (Bank 0 contains four 16 Kword blocks and thirty-one 64Kword blocks, Bank 1 ~ Bank 15 contain four hundred eighty 64Kword blocks) - Reduce program time using the VPP - Support 512-word Buffer Program - Power Consumption (Typical value, CL=30p F) - Synchronous Read Current : 35m A at...