K6R4008C1C-E - 512K x 8bit High Speed Static CMOS SRAM

This page provides the datasheet information for the K6R4008C1C-E, a member of the K6R4008C1C 512K x 8bit High Speed Static CMOS SRAM family.

Samsung

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Datasheet Details

Part number	K6R4008C1C-E
Manufacturer	Samsung
File Size	183.32 KB
Description	512K x 8bit High Speed Static CMOS SRAM
Datasheet	K6R4008C1C-E Datasheet
Additional preview pages of the K6R4008C1C-E datasheet.

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PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Preliminary. Rev. 1.0 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Rev. 2.0 2.1 Relax D.C parameters. Item 12ns ICC 15ns 20ns Previous 170mA 165mA 160mA Current 195mA 190mA 185mA 2.2 Relax Absolute Maximum Rating. Item Voltage on Any Pin Relative to Vss Previous -0.5 to 7.0 Current -0.5 to Vcc+0.5 Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part.

Published: Jul 18, 2017 |