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K8D1716UBB Datasheet 16M Dual Bank NOR Flash Memory

Manufacturer: Samsung Semiconductor

Download the K8D1716UBB datasheet PDF. This datasheet also includes the K8D1716U variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K8D1716U_Samsung.pdf) that lists specifications for multiple related part numbers.

General Description

The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16.

The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group.

This block architecture provides highly flexible erase and program capability.

Overview

K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No.

History 0.0 Initial Draft Draft Date July 25, 2004 Remark Advance 1 Revision 0.

Key Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations.
  • Organization 1,048,576 x 16 bit (Word mode).
  • Fast Read Access Time : 70ns.
  • Read While Program/Erase Operation.
  • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb.
  • Secode(Security Code) Block : Extra 64K Byte block.
  • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby M.