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K8D3216U Datasheet

Manufacturer: Samsung Semiconductor
K8D3216U datasheet preview

K8D3216U Details

Part number K8D3216U
Datasheet K8D3216U-Samsung.pdf
File Size 610.20 KB
Manufacturer Samsung Semiconductor
Description 32M-Bit (4M x8/2M x16) Dual Bank NOR Flash Memory
K8D3216U page 2 K8D3216U page 3

K8D3216U Overview

Single Voltage, 2.7V to 3.6V for Read and Write operations Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode) Fast Read Access Time : 70ns Read While Program/Erase Operation Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 24Mb Secode(Security Code) Block.

K8D3216U Key Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations
  • Organization
  • Fast Read Access Time : 70ns
  • Read While Program/Erase Operation
  • Dual Bank architectures
  • Secode(Security Code) Block : Extra 64K Byte block
  • Power Consumption (typical value @5MHz)
  • Read Current : 14mA
  • Program/Erase Current : 15mA
  • Read While Program or Read While Erase Current : 25mA

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