K8D3216U Datasheet (Samsung Semiconductor)

Part K8D3216U
Description 32M-Bit (4M x8/2M x16) Dual Bank NOR Flash Memory
Manufacturer Samsung Semiconductor
Size 610.20 KB
Pricing from 6.5292 USD, available from Win Source and ICPartonline.
Samsung Semiconductor

K8D3216U Overview

Key Specifications

Package: FBGA
Operating Voltage: 3 V
Max Voltage (typical range): 3.6 V
Min Voltage (typical range): 2.7 V

Description

Single Voltage, 2.7V to 3.6V for Read and Write operations - Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode) - Fast Read Access Time : 70ns - Read While Program/Erase Operation - Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 24Mb - Secode(Security Code) Block : Extra 64K Byte block - Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 5µA - WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless of block protect status - Removes special protection of two outermost boot block at VIH, the two blocks return to normal block protect status - Program time at VHH : 9µs/word - Erase Suspend/Resume - Unlock Bypass Program - Hardware RESET Pin - Command Register Operation - Block Group Protection / Unprotection - Supports Common Flash Memory Interface - Industrial Temperature : -40°C to 85°C - Endurance : 100,000 Program/Erase Cycles Minimum - Data Retention : 10 years - Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch 48 Ball TBGA : 6 x 8.5 mm / 0.8 mm Ball pitch 48 Ball FBGA : 6 x 8.5 mm / 0.8 mm Ball pitch The K8D3216U fea.

Price & Availability

Seller Inventory Price Breaks Buy
Win Source 1599 9+ : 6.5292 USD
22+ : 5.3569 USD
34+ : 5.1894 USD
46+ : 5.0219 USD
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ICPartonline 24440 1+ : 9 USD
10+ : 8.55 USD
100+ : 8.1 USD
1000+ : 7.65 USD
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