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K8D3216U Datasheet 32m-bit (4m X8/2m X16) Dual Bank Nor Flash Memory

Manufacturer: Samsung Semiconductor

K8D3216U Overview

• Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization Bank 1 / Bank 2 : 8Mb / 24Mb • Secode(Security Code) Block : Extra 64K Byte block • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 5µA • WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless of block protect status - Removes special protection of two outermost boot block at VIH, the two blocks return to normal block protect status

K8D3216U Key Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations
  • Organization
  • Fast Read Access Time : 70ns
  • Read While Program/Erase Operation
  • Dual Bank architectures
  • Secode(Security Code) Block : Extra 64K Byte block
  • Power Consumption (typical value @5MHz)
  • Read Current : 14mA
  • Program/Erase Current : 15mA
  • Read While Program or Read While Erase Current : 25mA

K8D3216U Distributor