K8Q2815UQB - FLASH MEMORY

Samsung

K8Q2815UQB Datasheet Preview — Preview of K8Q2815UQB PDF

Datasheet Details

Part number	K8Q2815UQB
Manufacturer	Samsung
File Size	659.48 KB
Description	FLASH MEMORY
Datasheet	K8Q2815UQB-Samsung.pdf

K8Q2815UQB Product details

Description

Read While Program/Erase Operation Multiple Bank architectures (8 banks) Bank 0 : 8Mbit (4Kw x 8 and 32Kw x 15) Bank 1 :24Mbit (32Kw x 48) Bank 2 : 24Mbit (32Kw x 48) The K8Q2815UQB featuring single 3.0V power supply, is an 128Mbit NOR-type Flash Memory organized as 8M x16. The memory architecture of the device is designed to divide its memory arrays into 284 blocks with independent hardware pro- Bank 3 : 8Mbit (4Kw x 8 and 32Kw x 15) tection.This block architecture prov

Features

Single Voltage, 2.7V to 3.6V for Read and Write operations.
Endurance : 100,000 Program/Erase Cycles Minimum.
Organization.
Data Retention : 10 years 8M x16 bit (Word mode Only).
Vccq options at 1.8V and 3V I/O.
Fast Read Access Time : 60ns.
Package options.
Page Mode Operation 8 Words Page access allows fast asychronous read Page Read Access Time : 20ns - 56 Pin TSOP (20x14mm) only.

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Published: Oct 31, 2015 |