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K9GAG08B0D Datasheet - Samsung

FLASH MEMORY

K9GAG08B0D Features

* Voltage Supply - 2.7V Device(K9G8G08B0D) : 2.5V ~ 2.9V - 3.3V Device(K9GAG08U0D) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit

* Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 2

K9GAG08B0D General Description

Offered in 2Gx8bit, the K9GAG08X0D is a 16G-bit NAND Flash Memory with spare 872M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,314-byte .

K9GAG08B0D Datasheet (1.06 MB)

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Datasheet Details

Part number:

K9GAG08B0D

Manufacturer:

Samsung

File Size:

1.06 MB

Description:

Flash memory.
K9GAG08B0D K9GAG08U0D Advance FLASH MEMORY K9GAG08X0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO C.

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TAGS

K9GAG08B0D FLASH MEMORY Samsung

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