K9NBG08U5M Datasheet - Samsung

NAND Flash Memory

K9NBG08U5M Features

* www.DataSheet4U.com

* Voltage Supply - 2.70V ~ 3.60V

* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Page Read Operation - Page Siz

K9NBG08U5M General Description

Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed.

K9NBG08U5M Datasheet (1.30 MB)

K9NBG08U5M Datasheet Preview — Preview of K9NBG08U5M PDF

Datasheet Details

Part number:

K9NBG08U5M

Manufacturer:

Samsung

File Size:

1.30 MB

Description:

Nand flash memory.
K9WAG08U1M K9K8G08U0M K9NBG08U5M FLASH MEMORY K9XXG08UXM www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC.

📁 Related Datasheet

K9NBG08U5A (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory (Samsung semiconductor)

K9NCG08U5M FLASH MEMORY (Samsung)

K903 2SK903-MR (Fuji Electric)

K904 2SK904 (Fuji Semiconductors)

K91G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)

K931 High Frequency Low Noise Amp (Sanyo Semiconductor)

K932 2SK932 (ON Semiconductor)

K9351M IF Filter (EPCOS)

K9352M IF Filter (EPCOS)

K9356M IF Filter (EPCOS)

TAGS

K9NBG08U5M NAND Flash Memory Samsung

Image Gallery

K9NBG08U5M Features

K9NBG08U5M General Description

Datasheet Details

File Size:

Description:

K9NBG08U5M Distributor