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KM616FV1000 Datasheet 64k X 16-bit Super Low Power And Low Voltage Full CMOS Static Ram

Manufacturer: Samsung Semiconductor

Overview: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 0.1 Revise - Erase 100ns part from KM616FS1000 Family - Add 150ns part on KM616FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V 1.0 Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power version with special handling ISB1=1.0µA(Max) - Reduce Icc & Icc1 Read : 15mA to 10mA Write : 25mA to 20mA 2.0 Revise - Change datasheet format - Erase reverse type package Draft Date March 15, 1996 June 3, 1996 Remark Advance Preliminary December 1, 1996 Final February 26, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 2.

General Description

The KM616FV1000, KM616FS1000 and KM616FR1000 families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

The families support various operating temperature ranges for user flexibility of system design.

The families also support low data retention voltage for battery back-up operation with low data retention current.

Key Features

  • Process Technology : Full CMOS.
  • Organization : 64Kx16 bit.
  • Power Supply Voltage KM616FV1000 Family : 3.0V ~ 3.6V KM616FS1000 Family : 2.3V ~ 3.3V KM616FR1000 Family : 1.8V ~ 2.7V.
  • Low Data Retention Voltage : 1.5V(Min).
  • Three state output status and TTL Compatible.
  • Package Type : 44-TSOP2-400F.

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More Datasheets from Samsung Semiconductor

Part Number Description
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