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M378T2953BG0-CC Datasheet Ddr2 Unbuffered Sdram Module

Manufacturer: Samsung Semiconductor

Overview: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 1.2 January 2005 Rev. 1.2 Jan. 2005 256MB,512MB,1GB Unbuffered DIMMs DDR2 Unbuffered DIMM Ordering Information Part Number Density Organization Component Composition Number of Rank 1 1 2 1 2 DDR2 SDRAM Height x64 Non ECC M378T3354BG(Z)0-CD5/CC M378T6553BG(Z)0-CD5/CC M378T2953BG(Z)0-CD5/CC M391T6553BG(Z)0-CD5/CC M391T2953BG(Z)0-CD5/CC 256MB 512MB 1GB 512MB 1GB 32Mx64 64Mx64 128Mx64 x72 ECC 64Mx72 128Mx72 64Mx8(K4T51083QB)*9 64Mx8(K4T51083QB)*18 30mm 30mm 32Mx16(K4T51163QB)*4 64Mx8(K4T51083QB)*8 64Mx8(K4T51083QB)*16 30mm 30mm 30mm Note: “Z” of Part number stand for Lead-free products.

Key Features

  • Performance range D5(DDR2-533) Speed@CL3 Speed@CL4 Speed@CL5 CL-tRCD-tRP 400 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps Mbps CK.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
  • 4 Bank.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Read Latency(RL) -1.
  • B.

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