K9F8G08B0M Description
K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY .. K9F8G08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
K9F8G08B0M Key Features
- Voltage Supply
- 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V
- 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (4K + 128) x 8bit
- Automatic Program and Erase
- Page Program : (4K + 128)Byte
- Block Erase : (256K + 8K)Byte
- Page Read Operation
K9F8G08B0M Applications
- Samsung Electronics reserves the right to change products or specification without notice