K9F8G08B0M Datasheet - Samsung Electronics

FLASH MEMORY

K9F8G08B0M Features

* Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (4K + 128) x 8bit

* Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K

K9F8G08B0M General Description

Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (4K+128)Byte .

K9F8G08B0M Datasheet (1.37 MB)

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Datasheet Details

Part number:

K9F8G08B0M

Manufacturer:

Samsung Electronics

File Size:

1.37 MB

Description:

Flash memory.
K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY www.DataSheet4U.com K9F8G08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODU.

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K9F8G08B0M FLASH MEMORY Samsung Electronics

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K9F8G08B0M Features

K9F8G08B0M General Description

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