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KM48V514D - 512K x 8-Bit CMOS DRAM

Download the KM48V514D datasheet PDF. This datasheet also covers the KM48C514D variant, as both devices belong to the same 512k x 8-bit cmos dram family and are provided as variant models within a single manufacturer datasheet.

Description

This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory unit for microcomputer, personal computer and portable machines.
  • Extended Data Out Mode operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM48C514D_SamsungElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KM48V514D
Manufacturer Samsung Electronics
File Size 527.94 KB
Description 512K x 8-Bit CMOS DRAM
Datasheet download datasheet KM48V514D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com KM48C514D, KM48V514D CMOS DRAM 512K x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time(-5,-6,-7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
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