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  Samsung Electronic Components Datasheet  

K1B3216BDD Datasheet

2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM

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K1B3216BDD
UtRAM
Document Title
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
Revision History
Revision No. History
0.0 Initial Draft
- Design target
Draft Date
Remark
September 02, 2004 Preliminary
0.1 Revised
November 01, 2004 Preliminary
- Corrected the name of 9th row of balls on the pakage to ’J’ from ’I’
on page.2 and page.42
1.0 Finalize
April 06, 2005
Final
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The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0
April 2005


  Samsung Electronic Components Datasheet  

K1B3216BDD Datasheet

2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM

No Preview Available !

K1B3216BDD
UtRAM
2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
FEATURES
Process Technology: CMOS
Organization: 2M x16 bit
Power Supply Voltage: 1.7~2.0V
Three State Outputs
Supports MRS (Mode Register Set)
MRS control - Software Control
Supports Driver Strength Optimization for system environment
Supports Async. 4-Page Read / Async. Write Mode
Supports Sync. Burst Read / Async. Write Mode
(Address Latch Type and Low ADV Type)
Supports Sync. Burst Read / Sync. Burst Write Mode
- Supports 4 word / 8 word / 16 word burst Length
- Supports Linear(Wrap) Burst type
- Latency support : Latency 5 @ 66MHz(tCD 10ns)
Latency 4 @ 54MHz(tCD 10ns)
- Supports Burst Read Suspend
- Supports Burst Write Data Masking by /UB & /LB control
- Supports WAIT function to indicate data availability.
Max. Burst Clock Frequency : 66MHz
Package Type : 54 FBGA 6.00 x 8.00
GENERAL DESCRIPTION
The world is moving into the mobile multi-media era and there-
fore the mobile handsets need much bigger memory capacity to
handle the multi-media data. SAMSUNG’s UtRAM products are
designed to meet all the request from the various customers
who want to cope with the fast growing mobile market. UtRAM is
the perfect solution for the mobile market with its low cost, high
density and high performance feature. K1B3216BDD is fabri-
cated by SAMSUNGs advanced CMOS technology using one
transistor memory cell. The device supports the traditional
SRAM like asynchronous bus operation (asynchronous page
read and asynchronous write), the NOR flash like synchronous
bus operation (synchronous burst read and asynchronous write)
and the fully synchronous bus operation (synchronous burst
read and synchronous burst write). These three bus operation
modes are defined through the mode register setting. The opti-
mization of output driver strength is possible through the mode
register setting to adjust for the different data loadings. Through
this driver strength optimization, the device can minimize the
noise generated on the data bus during read operation.
Table 1. PRODUCT FAMILY
Product Family Operating Temp. Vcc Range
K1B3216BDD-I Industrial(-40~85°C) 1.7~2.0V
Clock Freq.
(Max)
Async. Speed
(tAA)
Power Dissipation
Standby Operating
(ISB1, Max.) (ICC2, Max.)
PKG Type
66MHz
70ns
100uA
35mA
54 FBGA
6.00 x 8.00
Fig.1 PIN DESCRIPTION
12 3 456
A LB OE A0 A1 A2 PS
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B
I/O9
UB
A3
A4
CS I/O1
C
I/O10 I/O11
A5
A6 I/O2 I/O3
D Vssq I/O12 A17 A7 I/O4 Vcc
E Vccq I/O13 DNU A16 I/O5 Vss
F I/O15 I/O14 A14 A15 I/O6 I/O7
G I/O16 A19 A12 A13 WE I/O8
H
A18 A8
A9 A10 A11 A20
J WAIT CLK ADV DNU DNU DNU
54-FBGA - 6.00 x 8.00 Top View (Ball Down)
Table 2. PIN DESCRIPTION
Name
Function
CLK Clock Input
ADV Address Input Valid
PS* Power Save
CS Chip Select
OE Output Enable Input
WE Write Enable Input
A0~A20 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
* PS must be tied to VCC.
Name
VCC
VCCQ
VSS
VSSQ
UB
LB
WAIT
DNU
Function
Power Supply
I/O Power Supply
Ground
I/O Ground
Upper Byte(I/O9~16)
Lower Byte(I/O1~8)
Data Availability
Do Not Use
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
- 2 - Revision 1.0
April 2005


Part Number K1B3216BDD
Description 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
Maker Samsung Semiconductor
Total Page 30 Pages
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