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K4H561638D-TCB3 Datasheet 256Mb D-die DDR Sdram

Manufacturer: Samsung Semiconductor

Download the K4H561638D-TCB3 datasheet PDF. This datasheet also includes the K4H560838D-TCB3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K4H560838D-TCB3_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

256Mb Key.

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • DLL aligns DQ and DQS transition with CK transition.
  • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) www. DataSheet4U. com -. Burst length (2, 4, 8) -. Burst type (sequential & interleave).
  • All inputs except data & DM are sampled at the positive going edge of.

More Datasheets from Samsung Semiconductor

Part Number Description
K4H561638F 256Mb F-die DDR SDRAM Specification
K4H561638F-TCC4 256Mb F-die DDR400 SDRAM Specification
K4H561638F-TCCC 256Mb F-die DDR400 SDRAM Specification
K4H561638F-UCC4 256Mb F-die DDR400 SDRAM
K4H561638F-UCCC 256Mb F-die DDR400 SDRAM
K4H561638H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H561638J 256Mb J-die DDR SDRAM Specification
K4H560438D-TCB3 256Mb D-die DDR Sdram
K4H560438H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H560438J 256Mb J-die DDR SDRAM Specification